AIN Substrate

AIN Substrate (Aluminum nitride substrate) is a ceramic substrate material with aluminum nitride (AlN) as the main component. Due to its excellent physical, chemical and electrical properties, it has important applications in the fields of electronics, optoelectronics, semiconductors, etc. 

Material Properties

High thermal conductivity: The thermal conductivity of aluminum nitride is as high as 170-220 W/(m·K), which is much higher than that of traditional ceramic materials such as alumina, and it can effectively conduct and dissipate heat.

Good electrical insulation performance: Aluminum nitride has high resistivity and low dielectric constant, and can be used as an insulating material in electronic devices to prevent current leakage and signal interference.

Thermal expansion coefficient matching: The thermal expansion coefficient of aluminum nitride is similar to that of semiconductor materials such as silicon and gallium arsenide, which helps to reduce the thermal stress between the package base and the chip.

Strong mechanical properties: At room temperature, the flexural strength of dense aluminum nitride ceramics can reach 350 MPa, with high hardness, and it can still maintain good mechanical strength at high temperatures.

High chemical stability: Stable to acids, not wetted by various metals such as aluminum, copper, silver and lead, and can remain stable in some corrosive environments.

Environmentally friendly and non-toxic: Compared with toxic materials such as beryllium oxide, aluminum nitride is non-toxic and meets environmental protection requirements.